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II-VI LightSmyth™ 855nm, 200nm Groove Depth, 12.5mm Sq. Linear Silicon Nanostamp

II-VI LightSmyth™ Nanopatterned Silicon Stamps

II-VI LightSmyth™ Nanopatterned Silicon Stamps

Stock #16-855 New
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£250.75
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£250.75
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Period (nm):
855 ±42.75
Groove Depth (nm):
200 ±30
Line Width (nm):
425
Dimensions (mm):
12.50 x 12.50
Clear Aperture CA (mm):
11.50 x 11.50
Coating:
Uncoated
Construction:
RIE Grating
Length (mm):
12.50
Model Number:
1304075
Substrate: Many glass manufacturers offer the same material characteristics under different trade names. Learn More
Single Crystal Silicon
Surface Quality:
60-40 (within CA)
Thickness (mm):
0.68 ±0.05
Type:
Nanopatterned Silicon Stamp
Width (mm):
12.50

Regulatory Compliance

RoHS:

Product Family Description

  • Nanoscale-Textured Grooved Surfaces
  • Variable Groove Period and Groove Depth
  • Ideal for Nanophotonics Research Applications

II-VI LightSmyth™ Nanopattern Silicon Stamps consist of nanoscale-textured surfaces patterned on single-crystal silicon substrates. Through reactive ion etching, linear grooves with a trapezoidal cross-section are etched into the substrate surface, resembling conventional gratings. The etching process enables different period and depth specifications for these grooves, as well as more complex patterns such as lattices. II-VI LightSmyth™ Nanopattern Silicon Stamps are ideal for nanophotonics research applications in the fields of optics and photonics, biology, chemistry, nanoimprinting, and microfluidics.

SEM Image of 855nm, 200nm Groove Depth Linear Silicon Nanostamps (Cross Section)
SEM Image of 855nm, 200nm Groove Depth Linear Silicon Nanostamps (Cross Section)
SEM Image of 855nm, 200nm Groove Depth Linear Silicon Nanostamps (Top Down)
SEM Image of 855nm, 200nm Groove Depth Linear Silicon Nanostamps (Top Down)
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